Image sensor with selective pixel binning

ABSTRACT

An image sensor may include an array of imaging pixels. Each imaging pixel may have a photodiode that generates charge in response to incident light, a floating diffusion region, and a transfer transistor that transfers charge from the photodiode to the floating diffusion region. Each floating diffusion region may have an associated capacitance formed by a depletion region between n-type and p-type regions in a semiconductor substrate. To enable selective binning in the voltage domain, a number of transistors may be coupled to the floating diffusion capacitors. A first plurality of pixels may selectively couple the floating diffusion capacitors to ground. A second plurality of pixels may selective couple the floating diffusion capacitors to the floating diffusion capacitors of adjacent pixels. The voltages of multiple floating diffusion capacitors may be non-destructively binned on a single floating diffusion capacitor during readout.

This application claims benefit of and claims priority to provisionalpatent application No. 62/738,072, filed Sep. 28, 2018, which is herebyincorporated by reference herein in its entirety.

BACKGROUND

This relates generally to image sensors and, more particularly, to imagesensors with pixel binning capabilities.

Image sensors are commonly used in electronic devices such as cellulartelephones, cameras, and computers to capture images. In a typicalarrangement, an electronic device is provided with an array of imagepixels arranged in pixel rows and pixel columns. Each image pixel in thearray includes a photodiode that is coupled to a floating diffusionregion via a transfer gate. Each pixel receives incident photons (light)and converts the photons into electrical signals. Column circuitry iscoupled to each pixel column for reading out pixel signals from theimage pixels. Image sensors are sometimes designed to provide images toelectronic devices using a Joint Photographic Experts Group (JPEG)format.

Several image sensor applications require pixel binning. In someconventional image sensors, pixel binning is achieved by combiningelectrons from multiple pixels on a single node before readout. In otherconventional image sensors, digital signals from pixels may be combinedafter readout. However, such conventional image sensors may suffer fromlimited flexibility and/or lower than desired frame rates.

It would therefore be desirable to provide an improved imaging sensorwith variable pixel binning.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a diagram of an illustrative electronic device having an imagesensor in accordance with an embodiment.

FIG. 2 is a diagram of an illustrative pixel array and associatedreadout circuitry for reading out image signals in an image sensor inaccordance with an embodiment.

FIG. 3 is a circuit diagram of an illustrative imaging pixel inaccordance with an embodiment.

FIG. 4 is a schematic diagram illustrating the concept of pixel binningin the voltage domain in accordance with an embodiment.

FIG. 5 is a circuit diagram of an illustrative image sensor havingtransistors that enable selective pixel binning in the voltage domain inaccordance with an embodiment.

FIG. 6 is a circuit diagram of the image sensor of FIG. 5 in anillustrative 1×1 binning mode in which each pixel is read outindividually in accordance with an embodiment.

FIG. 7 is a circuit diagram of the image sensor of FIG. 5 in anillustrative 2×2 binning mode in which pixel signals from each 2×2 groupof imaging pixels are binned in the voltage domain before readout inaccordance with an embodiment.

FIG. 8 is a circuit diagram of the image sensor of FIG. 5 in anillustrative 4×4 binning mode in which pixel signals from each 4×4 groupof imaging pixels are binned in the voltage domain before readout inaccordance with an embodiment.

FIG. 9 is a flowchart of illustrative method steps for operating theimage sensor of FIG. 5 in accordance with an embodiment.

FIG. 10 is a cross-sectional side view of an illustrative image sensorshowing how a floating diffusion region may be isolated using anisolated p-well region in accordance with an embodiment.

FIG. 11 is a cross-sectional side view of an illustrative image sensorshowing how a floating diffusion region may be isolated using deeptrench isolation in accordance with an embodiment.

FIG. 12 is a cross-sectional side view of an illustrative image sensorshowing how a floating diffusion region may be isolated by a p-well andselectively coupled to ground by an indium gallium zinc oxide (IGZO)transistor in accordance with an embodiment.

FIG. 13 is a cross-sectional side view of an illustrative image sensorshowing how a floating diffusion region may be isolated by a p-well andselectively coupled to ground by a complementary metal oxidesemiconductor (CMOS) transistor in accordance with an embodiment.

FIG. 14 is a state diagram showing illustrative binning modes for animage sensor with circuitry of the type shown in FIGS. 5-8 in accordancewith an embodiment.

FIG. 15 is a circuit diagram showing how an illustrative readoutintegrated circuit may include transistors that enable pixel binning inthe voltage domain in accordance with an embodiment.

DETAILED DESCRIPTION

Embodiments of the present invention relate to image sensors. It will berecognized by one skilled in the art that the present exemplaryembodiments may be practiced without some or all of these specificdetails. In other instances, well-known operations have not beendescribed in detail in order not to unnecessarily obscure the presentembodiments.

Electronic devices such as digital cameras, computers, cellulartelephones, and other electronic devices may include image sensors thatgather incoming light to capture an image. The image sensors may includearrays of pixels. The pixels in the image sensors may includephotosensitive elements such as photodiodes that convert the incominglight into image signals. Image sensors may have any number of pixels(e.g., hundreds or thousands or more). A typical image sensor may, forexample, have hundreds of thousands or millions of pixels (e.g.,megapixels). Image sensors may include control circuitry such ascircuitry for operating the pixels and readout circuitry for reading outimage signals corresponding to the electric charge generated by thephotosensitive elements.

FIG. 1 is a diagram of an illustrative imaging and response systemincluding an imaging system that uses an image sensor to capture images.System 100 of FIG. 1 may be an electronic device such as a camera, acellular telephone, a video camera, or other electronic device thatcaptures digital image data, may be a vehicle safety system (e.g., anactive braking system or other vehicle safety system), or may be asurveillance system.

As shown in FIG. 1, system 100 may include an imaging system such asimaging system 10 and host subsystems such as host subsystem 20. Imagingsystem 10 may include camera module 12. Camera module 12 may include oneor more image sensors 14 and one or more lenses.

Each image sensor in camera module 12 may be identical or there may bedifferent types of image sensors in a given image sensor arrayintegrated circuit. During image capture operations, each lens may focuslight onto an associated image sensor 14 (such as the image sensor ofFIG. 2). Image sensor 14 may include photosensitive elements (i.e.,pixels) that convert the light into digital data. Image sensors may haveany number of pixels (e.g., hundreds, thousands, millions, or more). Atypical image sensor may, for example, have millions of pixels (e.g.,megapixels). As examples, image sensor 14 may include bias circuitry(e.g., source follower load circuits), sample and hold circuitry,correlated double sampling (CDS) circuitry, amplifier circuitry,analog-to-digital converter circuitry, data output circuitry, memory(e.g., buffer circuitry), address circuitry, etc.

Still and video image data from camera sensor 14 may be provided toimage processing and data formatting circuitry 16 via path 28. Imageprocessing and data formatting circuitry 16 may be used to perform imageprocessing functions such as data formatting, adjusting white balanceand exposure, implementing video image stabilization, face detection,etc. Image processing and data formatting circuitry 16 may also be usedto compress raw camera image files if desired (e.g., to JointPhotographic Experts Group or JPEG format). In a typical arrangement,which is sometimes referred to as a system on chip (SOC) arrangement,camera sensor 14 and image processing and data formatting circuitry 16are implemented on a common semiconductor substrate (e.g., a commonsilicon image sensor integrated circuit die). If desired, camera sensor14 and image processing circuitry 16 may be formed on separatesemiconductor substrates. For example, camera sensor 14 and imageprocessing circuitry 16 may be formed on separate substrates that havebeen stacked.

Imaging system 10 (e.g., image processing and data formatting circuitry16) may convey acquired image data to host subsystem 20 over path 18.Host subsystem 20 may include processing software for detecting objectsin images, detecting motion of objects between image frames, determiningdistances to objects in images, filtering or otherwise processing imagesprovided by imaging system 10.

If desired, system 100 may provide a user with numerous high-levelfunctions. In a computer or advanced cellular telephone, for example, auser may be provided with the ability to run user applications. Toimplement these functions, host subsystem 20 of system 100 may haveinput-output devices 22 such as keypads, input-output ports, joysticks,and displays and storage and processing circuitry 24. Storage andprocessing circuitry 24 may include volatile and nonvolatile memory(e.g., random-access memory, flash memory, hard drives, solid-statedrives, etc.). Storage and processing circuitry 24 may also includemicroprocessors, microcontrollers, digital signal processors,application specific integrated circuits, etc.

An example of an arrangement for camera module 12 of FIG. 1 is shown inFIG. 2. As shown in FIG. 2, camera module 12 includes image sensor 14and control and processing circuitry 44. Control and processingcircuitry 44 may correspond to image processing and data formattingcircuitry 16 in FIG. 1. Image sensor 14 may include a pixel array suchas array 32 of pixels 100 (sometimes referred to herein as image sensorpixels, imaging pixels, or image pixels 100) and may also includecontrol circuitry 40 and 42. Control and processing circuitry 44 may becoupled to row control circuitry 40 and may be coupled to column controland readout circuitry 42 via data path 26. Row control circuitry 40 mayreceive row addresses from control and processing circuitry 44 and maysupply corresponding row control signals to image pixels 100 overcontrol paths 36 (e.g., dual conversion gain control signals, pixelreset control signals, charge transfer control signals, blooming controlsignals, row select control signals, or any other desired pixel controlsignals). Column control and readout circuitry 42 may be coupled to thecolumns of pixel array 32 via one or more conductive lines such ascolumn lines 38. Column lines 38 may be coupled to each column of imagepixels 100 in image pixel array 32 (e.g., each column of pixels may becoupled to a corresponding column line 38). Column lines 38 may be usedfor reading out image signals from image pixels 100 and for supplyingbias signals (e.g., bias currents or bias voltages) to image pixels 100.During image pixel readout operations, a pixel row in image pixel array32 may be selected using row control circuitry 40 and image dataassociated with image pixels 100 of that pixel row may be read out bycolumn control and readout circuitry 42 on column lines 38.

Column control and readout circuitry 42 may include column circuitrysuch as column amplifiers for amplifying signals read out from array 32,sample and hold circuitry for sampling and storing signals read out fromarray 32, analog-to-digital converter circuits for converting read outanalog signals to corresponding digital signals, and column memory forstoring the read out signals and any other desired data. Column controland readout circuitry 42 may output digital pixel values to control andprocessing circuitry 44 over line 26.

Array 32 may have any number of rows and columns. In general, the sizeof array 32 and the number of rows and columns in array 32 will dependon the particular implementation of image sensor 14. While rows andcolumns are generally described herein as being horizontal and vertical,respectively, rows and columns may refer to any grid-like structure(e.g., features described herein as rows may be arranged vertically andfeatures described herein as columns may be arranged horizontally).

Pixel array 32 may be provided with a color filter array having multiplecolor filter elements, which allows a single image sensor to samplelight of different colors. As an example, image sensor pixels such asthe image pixels in array 32 may be provided with a color filter arraythat allows a single image sensor to sample red, green, and blue (RGB)light using corresponding red, green, and blue image sensor pixelsarranged in a Bayer mosaic pattern. The Bayer mosaic pattern consists ofa repeating unit cell of two-by-two image pixels, with two green imagepixels diagonally opposite one another and adjacent to a red image pixeldiagonally opposite to a blue image pixel. In another suitable example,the green pixels in a Bayer pattern are replaced by broadband imagepixels having broadband color filter elements (e.g., clear color filterelements, yellow color filter elements, etc.). In yet another example,the image sensor may be a monochrome sensor where each pixel is coveredby a color filter element of the same type (e.g., a clear color filterelement). These examples are merely illustrative and, in general, colorfilter elements of any desired color and in any desired pattern may beformed over any desired number of image pixels 100.

If desired, array 32 may be part of a stacked-die arrangement in whichpixels 100 of array 32 are split between two or more stacked substrates.In such an arrangement, each of the pixels 100 in the array 32 may besplit between the two dies at any desired node within the pixel. As anexample, a node such as the floating diffusion node may be formed acrosstwo dies. Pixel circuitry that includes the photodiode and the circuitrycoupled between the photodiode and the desired node (such as thefloating diffusion node, in the present example) may be formed on afirst die, and the remaining pixel circuitry may be formed on a seconddie. The desired node may be formed on (i.e., as a part of) a couplingstructure (such as a conductive pad, a micro-pad, a conductiveinterconnect structure, or a conductive via) that connects the two dies.Before the two dies are bonded, the coupling structure may have a firstportion on the first die and may have a second portion on the seconddie. The first die and the second die may be bonded to each other suchthat first portion of the coupling structure and the second portion ofthe coupling structure are bonded together and are electrically coupled.If desired, the first and second portions of the coupling structure maybe compression bonded to each other. However, this is merelyillustrative. If desired, the first and second portions of the couplingstructures formed on the respective first and second dies may be bondedtogether using any metal-to-metal bonding technique, such as solderingor welding.

As mentioned above, the desired node in the pixel circuit that is splitacross the two dies may be a floating diffusion node. Alternatively, thedesired node in the pixel circuit that is split across the two dies maybe the node between a floating diffusion region and the gate of a sourcefollower transistor (i.e., the floating diffusion node may be formed onthe first die on which the photodiode is formed, while the couplingstructure may connect the floating diffusion node to the source followertransistor on the second die), the node between a floating diffusionregion and a source-drain node of a transfer transistor (i.e., thefloating diffusion node may be formed on the second die on which thephotodiode is not located), the node between a source-drain node of asource-follower transistor and a row select transistor, or any otherdesired node of the pixel circuit.

In general, array 32, row control circuitry 40, column control andreadout circuitry 42, and control and processing circuitry 44 may besplit between two or more stacked substrates. In one example, array 32may be formed in a first substrate and row control circuitry 40, columncontrol and readout circuitry 42, and control and processing circuitry44 may be formed in a second substrate. In another example, array 32 maybe split between first and second substrates (using one of the pixelsplitting schemes described above) and row control circuitry 40, columncontrol and readout circuitry 42, and control and processing circuitry44 may be formed in a third substrate.

The image sensor may be implemented in a vehicle safety system. In avehicle safety system, images captured by the image sensor may be usedby the vehicle safety system to determine environmental conditionssurrounding the vehicle. As examples, vehicle safety systems may includesystems such as a parking assistance system, an automatic orsemi-automatic cruise control system, an auto-braking system, acollision avoidance system, a lane keeping system (sometimes referred toas a lane drift avoidance system), a pedestrian detection system, etc.In at least some instances, an image sensor may form part of asemi-autonomous or autonomous self-driving vehicle.

To improve performance of the image sensor, an image sensor may havepixel binning capabilities. FIG. 3 shows an illustrative imaging pixelthat may be included in an image sensor with selective pixel binning. Asshown in FIG. 3, pixel 100 may include a photodiode 102 (PD). A transfertransistor 104 (TX) may be coupled to the photodiode. When transfertransistor 104 is asserted, charge may be transferred from photodiode102 to an associated floating diffusion region 106 (FD). The floatingdiffusion region may have an associated capacitance C_(FD) as shown. Theassociated capacitance C_(FD) may be formed by a depletion regionbetween an n-type region and p-type region in a semiconductor substrate.The associated capacitance C_(FD) may sometimes be referred to as afloating diffusion capacitor (or floating diffusion region capacitor)C_(FD). The n-type region may form the upper plate of the floatingdiffusion capacitor and the p-type region may form the lower plate ofthe floating diffusion capacitor. A reset transistor 108 (RST) may becoupled between floating diffusion region 106 and a bias voltage supplyterminal 110. When reset transistor 108 is asserted, the voltage offloating diffusion region 106 may be reset.

Floating diffusion region 106 may be coupled to the gate of sourcefollower transistor 112 (SF). The source follower transistor is coupledbetween bias voltage supply terminal 110 and row select transistor 114(RS). When row select transistor 114 is asserted, an output voltageV_(OUT) may be provided to a column output line 116.

Pixel 100 may also include an anti-blooming transistor 118 (AB) that iscoupled between photodiode 102 and bias voltage supply terminal 120.When anti-blooming transistor 118 is asserted, charge from photodiode102 may be cleared to bias voltage supply terminal 120.

The example of FIG. 3 is merely illustrative. The imaging pixel may haveany desired transistor architecture. For example, the imaging pixel mayinclude charge storage regions (e.g., storage capacitors, storage gates,storage diodes, etc.), the imaging pixel may include dual conversiongain capacitors and/or dual conversion gain transistors, etc.

To allow for selective pixel binning, transistors may be included in theimage sensor that allow pixel binning in the voltage domain. Thefloating diffusion regions of adjacent pixels may be coupled togetherfor non-destructive binning. For example, additional transistors may beincorporated that allow selective summation of the voltage on thefloating diffusions of different pixels.

FIG. 4 is a schematic diagram illustrating the concept of pixel binningin the voltage domain. As an example, four imaging pixels may haverespective floating diffusion capacitors C_(FD1), C_(FD2), C_(FD3), andC_(FD4). Switches (e.g., transistors) such as switches 122, 124, and 126may be coupled between the floating diffusion regions. Each floatingdiffusion region may have its own respective voltage. However, closingthe switches will cause the voltage of one floating diffusion region toinfluence the voltage of an adjacent floating diffusion region.

For example, consider an example where C_(FD1) has an associated voltageV1 (e.g., 1 V), C_(FD2) has an associated voltage V2 (e.g., 2 V),C_(FD3) has an associated voltage V3 (e.g., 3 V), and C_(FD4) has anassociated voltage V4 (e.g., 4 V). When switches 122, 124, and 126 areall open, each floating diffusion has its respective voltage. If switch122 is closed, however, the voltage on C_(FD2) will become equal toV2+V1 (instead of just V2). If switches 122 and 124 are both closed, thevoltage on C_(FD3) will become equal to V3+V2+V1. If switches 122, 124,and 126 are all closed, then V_(OUT)=V4+V3+V2+V1. If the switches areall then reopened, the voltages at each floating diffusion will returnto their original levels.

To summarize, selective coupling of floating diffusion regions betweenpixels allows for selective binning of pixel signals in the voltagedomain. Selective binning may increase frame rate for the image sensor(because fewer total pixels need to be read out).

FIG. 5 is circuit diagram showing a portion of an illustrative imagesensor with transistors that enable selective binning in the voltagedomain. For simplicity, in FIG. 5 only the photodiodes 102, transfertransistors 104, floating diffusion regions 106, and source followertransistors 112 of each pixel 100 are shown. However, it should beunderstood that each pixel in FIG. 5 may include any of the componentsshown in FIG. 3 or any other desired pixel components (e.g., storagecapacitors, storage gates, storage diodes, dual conversion gaincapacitors, dual conversion gain transistors, etc.).

Additionally, the image sensor may include transistors such astransistors T1, T2, and T3. Each transistor T1 may be coupled between arespective C_(FD) (e.g., the p-type layer of a floating diffusion regioncapacitance) and ground. Each transistor T2 may be coupled to thefloating diffusion region of a first pixel (e.g., the n-type layer of afloating diffusion capacitor). Each transistor T2 may also be coupled toa respective node between the capacitor C_(FD) and ground on anadjacent, second pixel (e.g., the p-type layer of a floating diffusioncapacitor). Specifically, each transistor T2 is coupled between C_(FD)and transistor T1 of the adjacent, second pixel. Transistors T2 maycouple adjacent pixels that are in the same row in the image sensor.

Each transistor T3 may be coupled to the floating diffusion region of afirst pixel (e.g., the n-type layer of a floating diffusion capacitor).Each transistor T3 may also be coupled to a respective node between thecapacitor C_(FD) and ground on an adjacent, second pixel (e.g., thep-type layer of a floating diffusion capacitor). Specifically, eachtransistor T3 is coupled between C_(FD) and transistor T1 of theadjacent, second pixel. Transistors T3 may couple adjacent pixels thatare in the same column in the image sensor. Transistors T2 and T3 may becoupled to the same node between C_(FD) and transistor T1 of a givenpixel.

In FIG. 5, each pixel is depicted as having a respective transistor T1.A transistor T2 is depicted as being connected between each adjacentpair of pixels in the image sensor. However, a transistor T3 is depictedas being connected only between some adjacent pairs of pixels in theimage sensors. This example is merely illustrative. In general, everypixel may or may not be coupled to a respective transistor T1, T2,and/or T3. The more transistors T1, T2, and T3 that are included in theimage sensor, the greater the flexibility of the provided pixel binning.The arrangement of FIG. 5 may provide for 1×1 binning (e.g., nobinning), 2×2 binning, and 4×4 binning capabilities. If the pattern ofFIG. 5 is repeated across the image sensor, additional binning patterns(16×16, 32×32, 64×64, etc.) will also be possible.

FIGS. 6-8 illustrate different binning modes of the image sensor shownin FIG. 5. For simplicity, in FIGS. 6-8 only the photodiodes 102,transfer transistors 104, floating diffusion regions 106, and sourcefollower transistors 112 of each pixel 100 are shown. However, it shouldbe understood that each pixel in FIGS. 6-8 may include any of thecomponents shown in FIG. 3 or any other desired pixel components (e.g.,storage capacitors, storage gates, storage diodes, dual conversion gaincapacitors, dual conversion gain transistors, etc.).

Additionally, for simplicity, in FIGS. 6-8 only the transistors T1, T2,T3 that are asserted in the given binning mode are depicted in thefigures. However, it should be understood that all of the transistors inFIG. 5 are present in the image sensor of FIGS. 6-8; the deassertedtransistors are just not depicted in FIGS. 6-8.

FIG. 6 shows an illustrative 1×1 binning mode (e.g., no binning mode) inwhich each pixel is read out individually. As shown, the transistor T1for each pixel is asserted, coupling the floating diffusion regions ofeach pixel to ground. This mode provides the highest resolution imagedata.

FIG. 7 shows an illustrative 2×2 binning mode in which pixel signalsfrom each 2×2 group of imaging pixels are binned in the voltage domainbefore readout. As shown in FIG. 7, a given 2×2 group of imaging pixelsincluding pixels 100-1, 100-2, 100-3, and 100-4 may be binned.Transistor T1 of pixel 100-1 is asserted, coupling the floatingdiffusion region of 100-1 to ground. However, T2 between transistors100-1 and 100-2 is asserted to couple the floating diffusion region ofpixel 100-1 to the floating diffusion region of pixel 100-2. T3 betweentransistors 100-2 and 100-3 is asserted to couple the floating diffusionregion of pixel 100-2 to the floating diffusion region of pixel 100-3.T2 between transistors 100-3 and 100-4 is asserted to couple thefloating diffusion region of pixel 100-3 to the floating diffusionregion of pixel 100-4. In this way, the voltage at the floatingdiffusion region of pixel 100-4 will be equivalent to the floatingdiffusion voltages of pixels 100-1, 100-2, 100-3, and 100-4 (similar tohow V_(OUT)=V1+V2+V3+V4 in connection with FIG. 4). This effectivelybins the pixel signal levels. Only the upper-right pixel 100-4 of each2×2 group may be read out. This results in a frame rate that is fourtimes faster than when every pixel level is read out. The faster framerate may be better for imaging moving objects (e.g., for better velocitydetermination).

FIG. 8 shows an illustrative 4×4 binning mode in which pixel signalsfrom each 4×4 group of imaging pixels are binned in the voltage domainbefore readout. As shown in FIG. 8, transistor T1 of the lower-rightpixel is asserted, coupling the floating diffusion region thelower-right pixel to ground. A chain of transistors T2 and T3 are alsoasserted between the floating diffusion regions of adjacent pixels untilthe upper-right pixel is reached. This effectively bins the pixel signallevels of all sixteen pixels depicted in FIG. 8. Only the upper-rightpixel of each 4×4 group may be read out. This results in a frame ratethat is sixteen times faster than when every pixel level is read out.

When operating the image sensor of FIGS. 5-8, correlated double samplingmay be used. Before the transfer transistors are asserted to transfercharge from the photodiodes to the floating diffusion regions, thefloating diffusion region may be reset and a reset level of the floatingdiffusion region may be sampled. If desired, the floating diffusionregion may be reset and sampled while all of transistors T1, T2, and T3are deasserted. After sampling the reset level, charge from thephotodiodes may be transferred to respective floating diffusion regions.Transistors T1, T2, and T3 may be deasserted during charge transfer.Alternatively, transistors T1, T2, and T3 may optionally remain assertedduring charge transfer. After charge transfer, the selected transistorsT1, T2, and T3 associated with the given binning mode may be asserted(e.g., for a 1×1 binning mode the transistors of FIG. 6 may be asserted,for a 2×2 binning mode the transistors of FIG. 7 may be asserted, for a4×4 binning mode the transistors of FIG. 8 may be asserted). The signallevels of the floating diffusion regions of desired pixels (e.g., onefor each binned group) may then be read out.

An illustrative method of operating the image sensor shown in FIGS. 5-8will now be discussed. First, charge may be integrated on thephotodiode. In one illustrative example, the integration time may bestarted by asserting an anti-blooming transistor (e.g., anti-bloomingtransistor 118 in FIG. 3). In another example, the integration time maybe started by asserting the transfer transistor and reset transistorsimultaneously (e.g., transistors 104 and 108 in FIG. 3).

Next, before reading out the photodiode, the floating diffusion regionmay be reset to remove any accumulated charge from the floatingdiffusion region. To reset the floating diffusion region, all of thetransistors T1 in the image sensor may be asserted to ground all of thefloating diffusion region capacitors (C_(FD)). Next, the resettransistor (108) for each transistor may be asserted to reset thevoltage of the floating diffusion region capacitors. After resetting thevoltage of the floating diffusion region capacitors, the desiredcombination of transistors T1, T2, and T3 for a particular binningarrangement may be asserted (e.g., as in FIG. 6 for 1×1 binning, as inFIG. 7 for 2×2 binning, as in FIG. 8 for 4×4 binning). Once the desiredtransistors T1, T2, and T3 are asserted, the reset voltage of the pixelsof interest (e.g., the pixels that will be read out for that particularbinning mode) may be sampled.

After sampling the reset voltage, all of the transistors T1 may beasserted (e.g., even if they will not later be asserted for thatparticular binning arrangement). The transfer transistors may then beasserted, transferring charge to the floating diffusion regions. Aftercharge transfer, the transfer transistors are deasserted. Then, thedesired combination of transistors T1, T2, and T3 for the particularbinning arrangement (e.g., the same combination of transistors T1, T2,and T3 as during the reset signal sampling) may be asserted. Once thedesired transistors T1, T2, and T3 are asserted, the signal voltage ofthe pixels of interest (e.g., the pixels that are read out for thatparticular binning mode) may be sampled.

FIG. 9 is a flowchart of illustrative method steps for operating theimage sensor of FIGS. 5-8. At step 302, the photodiodes may be reset tobegin the integration time. The photodiodes may be reset by assertingthe anti-blooming transistors of each pixel, for example. After theintegration time, to begin the readout, all T1 transistors may beasserted at step 304. Asserting the T1 transistors grounds each floatingdiffusion region, and the floating diffusion regions may then be resetby asserting the reset transistors of the pixels.

After the floating diffusion regions are reset at step 304, acombination of T1, T2, and T3 transistors that is associated with afirst binning configuration may be asserted at step 306. Once thecombination of T1, T2, and T3 transistors are asserted, a reset voltageof the floating diffusion regions may be sampled at step 308.

Because the voltage pixel binning is non-destructive, the pixels may besampled in multiple binning modes in a single frame. This is optional,and a single binning mode may be sampled in each frame if desired. Ifmultiple binning mode samples are desired in a single frame, steps 306and 308 may optionally be repeated as indicated by arrow 307 (e.g., fora second binning mode). For each unique binning mode, a respectiveunique set of transistors T1, T2, and T3 may be asserted at step 306 anda respective reset voltage may be obtained at step 308.

After all desired reset voltage samples have been obtained, the methodmay proceed to step 310. At step 310, all T1 transistors may be assertedand all T2 and T3 transistors may be deasserted. In this state, transfertransistors may be asserted to transfer charge from each photodiode to arespective floating diffusion region. Next, at step 312, the combinationof T1, T2, and T3 transistors associated with the first binning mode isasserted. The signal voltage may then be obtained from each pertinentfloating diffusion region associated with that binning mode. Forexample, in a 2×2 binning mode, only one of every four floatingdiffusion regions has a signal voltage that needs to be sampled. Thesignal voltage may be used with the reset voltage for a correlateddouble sampling readout value.

If only one binning mode is being sampled per frame, the readout for theframe may be complete after step 314. If multiple binning modes arebeing sampled per frame, however, additional sampling may be performed.As shown in FIG. 9, in optional step 316, a combination of T1, T2, andT3 transistors associated with a second binning mode (e.g., a differentcombination than in step 312) may be asserted. The signal voltages ofthe floating diffusion regions pertinent in the second binning mode arethen sampled at step 318. Similar to step 314, only the pertinentfloating diffusion regions associated with the second binning mode mayhave their signal voltage sampled.

A reset voltage sample may be used to help correct the signal voltagesobtained in step 318. There are a number of options for how to correctthe signal voltages obtained in step 318. First, the reset voltages fromstep 308 when transistors T1, T2, and T3 were asserted in a combinationassociated the first binning mode may be used (even though the first andsecond binning modes have different combinations of T1, T2, and T3asserted). In other words, the reset voltage sampled in connection withthe first binning mode may still be used for correlated double samplingin the second binning mode. Another option is to use the reset voltagesfrom step 308 when transistors T1, T2, and T3 were in a combination forthe second binning mode. Yet another alternative is to obtain a resetvoltage sample at step 320. At step 320, the floating diffusion regionsmay be reset (e.g., by asserting T1 transistors and the resettransistors), the combination of transistors T1, T2, and T3 associatedwith the second binning mode may be asserted, and the second resetvoltages may be sampled. Obtaining a reset voltage for correcting asignal voltage after the signal voltage has been sampled may be referredto as uncorrelated double sampling.

If not isolated, the floating diffusion capacitor C_(FD) may have aneffective capacitance that is affected by neighboring circuitcomponents. For the image sensor shown in FIGS. 5-8, the floatingdiffusion regions of each pixel may be isolated from the substrate sothat the floating diffusion regions may be independently connected inseries. FIG. 10 shows an image sensor with a floating diffusion regionisolated using an isolated p-well region, whereas FIG. 11 shows an imagesensor with a floating diffusion region isolated using deep trenchisolation (DTI).

In FIG. 10, a substrate 130 may include photodiode 102. Substrate 130may be a p-type epitaxial substrate with a deep n-well 131 andphotodiode 102. An isolated p-well 136 may isolate n+ region 138 and p+region 140. Floating diffusion 106 may be formed from n+ region 138. Atransfer gate 104 is interposed between photodiode 102 and floatingdiffusion 106. Interlayer dielectric layers 132 and 134 (sometimesreferred to as gate dielectrics) are formed below and over transfer gate104. Isolated p-well 136 isolates p+ region 140 from p+ region 142. Thisallows photodiode 102 to remain grounded even as floating diffusionregion 138 is independently coupled or uncoupled from ground (throughtransistor T1). The p+ region 142 may be a ground contact that iscoupled to transistor T1. T1 is coupled between p+ regions 142 (on oneside of the isolated p-well 136) and 140 (on the other side of theisolated p-well 136). Transistor T1 may be a semiconducting oxidetransistor formed with an active channel of indium gallium zinc oxide(IGZO).

As shown in FIG. 10, transistor T1 includes active channel 190 (formedfrom IGZO), metal contacts 192, gate 194, and dielectric layers 196. Allof transistors T1, T2, and T3 may optionally be semiconducting oxidetransistors (e.g., having similar structure as shown in T1 in FIG. 10).Semiconducting oxide transistors have low leakage levels that may beuseful in the image sensor discussed herein due to effective isolationof the floating diffusion regions. The semiconducting oxide transistorsalso may be formed within a metal stack without requiring additionalsilicon, resulting in efficient manufacturing.

In FIG. 10, the light collecting area for the pixel may include deepn-well 131 as well as photodiode 102. Isolated p-well 136 may be formedfrom p-type epitaxial silicon.

The example of using isolated p-well 136 with a surrounding deep n-wellto isolate floating diffusion region 138 is merely illustrative.Alternatively, deep trench isolation such as deep trench isolation 152may be used for isolation as shown in FIG. 11. The deep trench isolationmay be formed from a material such as oxide or metal in a trench insubstrate 130. The deep trench isolation may extend from a front surface198 of substrate 130 to a back surface 199 of substrate 130. Buriedoxide (BOX) 188 may be formed at the back surface of substrate 130.Isolated p-well 136 may still be formed around floating diffusion region138. The light collecting area of the pixel in FIG. 11 includesphotodiode 102 (and not an additional deep n-well as in FIG. 10).Although not explicitly shown in FIG. 11, a semiconducting oxidetransistor may be coupled between p+ regions 140 and 142 in FIG. 11similar to as depicted in FIG. 10.

FIG. 12 is a cross-sectional side view of an image sensor showinganother possible embodiment for isolating the floating diffusion region(FD) in a given imaging pixel. As shown in FIG. 12, a substrate 130 mayinclude photodiode 102. Photodiode 102 may be electrically connected ton+ region 158 and n+ region 154. The n+ regions 154 and 158 may beseparated by shallow trench isolation 152. A metal layer 156 mayelectrically connect n+ region 154 to n+ region 158 across STI 152.Substrate 130 may be a p-type epitaxial substrate with a deep n-well160.

An isolated p-well 136 may isolate n+ regions 138 and 154 as well as p+region 140. Floating diffusion 106 may be formed from n+ region 138. Atransfer gate 104 is interposed between n+ region 154 (which iselectrically connected to photodiode 102) and floating diffusion 106.Interlayer dielectric layers 132 and 134 (sometimes referred to as gatedielectrics) are formed below and over transfer gate 104. Isolatedp-well 136 isolates p+ region 140 from p+ region 142. The p+ region 142may be a ground contact that is coupled to transistor T1. T1 is coupledbetween p+ regions 142 (on one side of STI 152) and 140 (on the otherside of STI 152). Transistor T1 may be a semiconducting oxide transistorformed with an active channel of a semiconducting oxide such as indiumgallium zinc oxide (IGZO). T1 in FIG. 12 may be formed within a metalstack without requiring additional silicon. Although T1 is explicitlydepicted in FIG. 12, all of transistors T1, T2, and T3 may optionally besemiconducting oxide transistors.

FIG. 13 is a cross-sectional side view of an image sensor showing yetanother possible embodiment for isolating the floating diffusion region(FD) in a given imaging pixel. The image sensor depicted in FIG. 13 hasa similar structure as in FIG. 12. However, instead of using IGZOtransistor T1 as in FIG. 12, the transistor T1 in FIG. 13 is formed inthe same manner as transfer transistor 104 (e.g., using complementarymetal oxide semiconductor or CMOS techniques). P+ region 140 may becoupled to an n+ region 174 on the other side of shallow trenchisolation 152 by metal interconnect layer 172. T1 may have a gate formedover substrate 130 between n+ region 174 and n+ region 176. N+ region176 is then coupled to p+ region 142 by metal interconnect layer 178. T1may be asserted to selectively ground floating diffusion region 138(e.g., by selectively coupling p+ region 140 to p+ region 142).

FIG. 14 is a state diagram showing illustrative binning modes for animage sensor with circuitry of the type shown in FIGS. 5-8 in accordancewith an embodiment. Processing circuitry (also referred to as controlcircuitry) in an imaging system may place the image sensor in a desiredbinning mode (sometimes referred to as voltage binning mode). As shown,the image sensor may be operable in a first binning mode 202, a secondbinning mode 204, and a third binning mode 206. Each binning mode mayhave a different binning arrangement. For example, first binning mode202 may be a 1×1 binning mode in which no binning occurs and each pixelis read out individually (as in FIG. 6). Optionally, in the 1×1 binningmode only a subset of the pixels may be read out to increase frame rate(this is known as using subwindows). Second binning mode 204 may be a2×2 binning mode in which signals from each 2×2 group of pixels arebinned and only one of every four pixels is read out (as in FIG. 7).Third binning mode 206 may be a 4×4 binning mode in which signals fromeach 4×4 group of pixels are binned and only one of every sixteen pixelsis read out (as in FIG. 8).

The image sensor may switch between modes based on a userpreference/selection, based on information from processing circuitry,(e.g., based on if a moving object is present in the scene or based onthe magnitude of the velocity of a moving object in the scene), etc. Theimage sensor may be part of a system with different operating modes.

For example, in a first operating mode, the image sensor may run infirst binning mode 202. If processing circuitry detects motion in theimage data captured during the first binning mode, the image sensor mayswitch to second binning mode 204 for velocity determination. If theobject is large enough, a centroiding algorithm may be used for moreaccurate velocity determination. If the object is moving fast enough(e.g., if the measured velocity exceeds a given velocity threshold), theimage sensor may switch to third binning mode 206 for better velocityresolution.

In a second operating mode, the image sensor may run in third binningmode 206. When motion is detected, the image sensor may switch to thefirst binning mode 202 for one frame to obtain one frame at higherresolution for object identification.

Since the binning is non-destructive, a single frame of image data maybe read in multiple ways if desired (e.g., in a first binning mode thenagain in a second binning mode).

The example in FIG. 14 of the image sensor having three binning modes ismerely illustrative. In general, the image sensor may have any desirednumber of binning modes, each binning mode may have any desired binningarrangement, and the image sensor may switch between the binning modesin any desired manner.

The voltage binning described herein may be applicable to monolithicimage sensors and stacked image sensors. In stacked image sensors, twoor more substrates (e.g., wafers) are connected with a conductiveinterconnect layer. For example, at any location in the circuit diagramsof FIGS. 3 and 5, an interconnect layer may be included and the pixelcircuit may be split between two substrates.

The techniques of non-destructive voltage binning described herein mayalso be used on read-out integrated circuits (ROICs). ROICs may becoupled to an array of photosensitive elements by conductiveinterconnect layers. For example, mercury cadmium telluride (HgCdTe) oranother material (e.g., gallium arsenide) may be used to formphotosensitive elements for infrared light detection. An ROIC with theselective binning capabilities described herein may be coupled to thephotosensitive elements by conductive interconnect layers.

FIG. 15 is a circuit diagram of an illustrative ROIC with selectivebinning capabilities. In image sensor 402 in FIG. 15, a photosensitivearea 404 (e.g., that generates charge in response to infrared light) iscoupled to a read-out integrated circuit (ROIC) 406. The photosensitivearea 404 may be formed from mercury cadmium telluride (HgCdTe) oranother material (e.g., gallium arsenide). The ROIC may include atransimpedance amplifier 408 (with an operational amplifier, capacitor,and transistor) that converts current to voltage. A capacitor 412 andfloating diffusion region 410 are coupled to the output of thetransimpedance amplifier. A reset transistor 414 is coupled to thefloating diffusion region. The floating diffusion region is coupled tothe gate of source follower transistor 416. A readout capacitor 418 iscoupled one of the terminals of the source follower transistor. Thereadout capacitor may be coupled to transistors T1 (that selectivelycouple the readout capacitor to ground), T2 (that selectively couple thereadout capacitor to a readout capacitor in an adjacent column), and T3(that selectively couple the readout capacitor to a readout capacitor inan adjacent row) similar to as shown in connection with the floatingdiffusion capacitors of FIG. 5. FIG. 15 also shows an additional sourcefollower transistor 420 and row select transistor 422.

Although readout capacitor 418 in FIG. 15 is in a different location andhas a different application compared to the capacitors in FIG. 5, theselective binning techniques may be applied in a similar manner. Thisillustrates how the techniques of non-destructive voltage binningdescribed herein may be used in numerous applications (such as in ROICs)and is not limited to the floating diffusion voltage binning shown inFIG. 5.

The foregoing is merely illustrative of the principles of this inventionand various modifications can be made by those skilled in the art. Theforegoing embodiments may be implemented individually or in anycombination.

What is claimed is:
 1. An image sensor comprising an array of imagingpixels, the image sensor comprising: a photodiode for a first imagingpixel of the array of imaging pixels, wherein the photodiode isconfigured to generate charge in response to incident light; a firstfloating diffusion capacitor for the first imaging pixel, wherein thefirst floating diffusion capacitor is formed from a first depletionregion between a first n-type region and a first p-type region in asemiconductor substrate; a transfer transistor configured to transfercharge from the photodiode to the first floating diffusion capacitor; afirst transistor configured to selectively couple the first p-typeregion to ground; and a second transistor configured to selectivelycouple the first floating diffusion capacitor to a second floatingdiffusion capacitor of a second imaging pixel in the array of imagingpixels.
 2. The image sensor defined in claim 1, wherein the secondimaging pixel is adjacent to the first imaging pixel.
 3. The imagesensor defined in claim 2, wherein the first imaging pixel is in a firstrow and a first column of the array of imaging pixels and wherein thesecond imaging pixel is in the first row and a second column of thearray of imaging pixels.
 4. The image sensor defined in claim 3, furthercomprising: a third transistor configured to selectively couple thefirst floating diffusion capacitor to a third floating diffusioncapacitor of a third imaging pixel in the array of imaging pixels. 5.The image sensor defined in claim 4, wherein the third imaging pixel isin a second row and the first column of the array of imaging pixels. 6.The image sensor defined in claim 2, wherein the first imaging pixel isin a first row and a first column of the array of imaging pixels andwherein the second imaging pixel is in a second row and the first columnof the array of imaging pixels.
 7. The image sensor defined in claim 1,wherein the second floating diffusion capacitor is formed from a seconddepletion region between a second n-type region and second p-type regionin a semiconductor substrate.
 8. The image sensor defined in claim 7,wherein the second transistor selectively couples the first n-typeregion to the second p-type region.
 9. The image sensor defined in claim8, wherein the second imaging pixel is formed in an adjacent row and thesame column as the first imaging pixel, the image sensor furthercomprising: a third imaging pixel in the array of imaging pixels,wherein the third imaging pixel is formed in an adjacent column and thesame row as the first imaging pixel; and a third transistor configuredto selectively couple the first n-type region to a third p-type regionof a third floating diffusion capacitor of the third imaging pixel. 10.The image sensor defined in claim 1, wherein the first transistor isformed with an active channel of indium gallium zinc oxide.
 11. Theimage sensor defined in claim 10, wherein the first p-type region isisolated from an additional p-type region that is coupled to ground. 12.An image sensor comprising: an array of imaging pixels, each imagingpixel of the array of imaging pixels comprising a photodiode configuredto generate charge in response to incident light, a floating diffusioncapacitor, and a transfer transistor configured to transfer charge fromthe photodiode to the floating diffusion capacitor; a plurality oftransistors, wherein each transistor is at least coupled to the floatingdiffusion capacitor of a respective one of the imaging pixels; andcontrol circuitry configured to operate in a first binning mode in whicha first subset of the plurality of transistors are asserted duringreadout to non-destructively bin first groups of pixels in a voltagedomain and a second binning mode in which a second subset of theplurality of transistors are asserted during readout tonon-destructively bin second groups of pixels in the voltage domain,wherein the first and second groups are different, wherein the controlcircuitry is configured to non-destructively bin voltages from a firstnumber of capacitors for a first readout in the first image frame,wherein the control circuitry is configured to non-destructively binvoltages from a second number of capacitors for a second readout in thefirst image frame, and wherein the second number is different than thefirst number.
 13. The image sensor defined in claim 12, wherein thefirst binning mode is a 2×2 voltage binning mode.
 14. The image sensordefined in claim 13, wherein, in the 2×2 voltage binning mode, voltagesfrom the floating diffusion capacitors of four imaging pixels in a 2×2arrangement are binned on the floating diffusion capacitor of a singleone of the four imaging pixels.
 15. The image sensor defined in claim14, wherein the second binning mode is a 4×4 voltage binning mode inwhich voltages from the floating diffusion capacitors of sixteen imagingpixels in a 4×4 arrangement are binned on the floating diffusioncapacitor of a single one of the sixteen imaging pixels.
 16. The imagesensor defined in claim 12, wherein the photodiodes of the imagingpixels are formed in a semiconductor substrate and wherein the floatingdiffusion capacitors of the imaging pixels are formed by a depletionregion between an n-type region and an isolated p-type region in thesemiconductor substrate.
 17. An image sensor comprising: an array ofimaging pixels, each imaging pixel of the array of imaging pixelscomprising a capacitor; a plurality of transistors, wherein eachtransistor of the plurality of transistors is coupled to the capacitorof at least one of the imaging pixels; and control circuitry configuredto use the plurality of transistors to non-destructively bin voltagesfrom two or more capacitors on a single capacitor during readout,wherein the control circuitry is configured to non-destructively binvoltages from a first number of capacitors for a first readout in afirst image frame, wherein the control circuitry is configured tonon-destructively bin voltages from a second number of capacitors for asecond readout in the first image frame, and wherein the second numberis different than the first number.
 18. The image sensor defined inclaim 17, wherein each capacitor is a floating diffusion capacitorformed by a respective depletion region between an n-type region and anisolated p-type region in the semiconductor substrate.